Characterized by wide band gap , high breakage electric field , high thermal conductivity , high saturated electron mobility , cubic silicon carbide ( 3c - sic ) , considered as one of the most promising wide band gap semiconductors , is widely utilized in high temperature , high frequency and large power semiconductor devices 3c - sic被譽為最有潛力的寬禁帶半導體材料,具有帶隙寬、臨界擊穿電場高、熱導率高、飽和電子漂移速度大等優(yōu)點,是高溫、高頻、高功率半導體器件的首選材料。